Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties
Identifieur interne : 000429 ( Russie/Analysis ); précédent : 000428; suivant : 000430Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties
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Abstract
Soft-x-ray-emission and -absorption spectroscopies with their elemental specificities are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both valence and conduction bands. In particular, a depletion of the valence-band maximum in the N local charge, taking place at the N impurities, appears as one of the fundamental origins of reduced optical efficiency of Ga(In)AsN. Incorporation of In in large concentrations forms In-rich N local environments such as In4N which become the main recombination centers in GaInAsN. Furthermore, a k character of some valence and conduction states, despite the random-alloy nature of Ga(In)AsN, manifests itself in resonant inelastic x-ray scattering.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties</title><author><name sortKey="Strocov, V N" uniqKey="Strocov V">V. N. Strocov</name></author><author><name sortKey="Nilsson, P O" uniqKey="Nilsson P">P. O. Nilsson</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Chalmers University of Technology and Goteborg University, SE-41296 Goteborg, Sweden</s1><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics, Chalmers University of Technology and Goteborg University, SE-41296 Goteborg</wicri:regionArea><wicri:noRegion>SE-41296 Goteborg</wicri:noRegion></affiliation></author><author><name sortKey="Schmitt, T" uniqKey="Schmitt T">T. Schmitt</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Uppsala University, Ångstrom Laboratory, Box 530, S-75121 Uppsala, Sweden</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics, Uppsala University, Ångstrom Laboratory, Box 530, S-75121 Uppsala</wicri:regionArea><wicri:noRegion>S-75121 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Augustsson, A" uniqKey="Augustsson A">A. Augustsson</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Uppsala University, Ångstrom Laboratory, Box 530, S-75121 Uppsala, Sweden</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics, Uppsala University, Ångstrom Laboratory, Box 530, S-75121 Uppsala</wicri:regionArea><wicri:noRegion>S-75121 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Gridneva, L" uniqKey="Gridneva L">L. Gridneva</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Uppsala University, Ångstrom Laboratory, Box 530, S-75121 Uppsala, Sweden</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics, Uppsala University, Ångstrom Laboratory, Box 530, S-75121 Uppsala</wicri:regionArea><wicri:noRegion>S-75121 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Debowska Nilsson, D" uniqKey="Debowska Nilsson D">D. Debowska Nilsson</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Chalmers University of Technology and Goteborg University, SE-41296 Goteborg, Sweden</s1><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics, Chalmers University of Technology and Goteborg University, SE-41296 Goteborg</wicri:regionArea><wicri:noRegion>SE-41296 Goteborg</wicri:noRegion></affiliation></author><author><name sortKey="Claessen, R" uniqKey="Claessen R">R. Claessen</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Experimentalphysik II, Universitat Augsburg, D-86135 Augsburg, Germany</s1><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik II, Universitat Augsburg, D-86135 Augsburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Souabe</region><settlement type="city">Augsbourg</settlement></placeName></affiliation></author><author><name sortKey="Egorov, A Yu" uniqKey="Egorov A">A. Yu. Egorov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Alferov, Zh I" uniqKey="Alferov Z">Zh. I. Alferov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0083813</idno><date when="2004-01-15">2004-01-15</date><idno type="stanalyst">PASCAL 04-0083813 AIP</idno><idno type="RBID">Pascal:04-0083813</idno><idno type="wicri:Area/Main/Corpus">00BF56</idno><idno type="wicri:Area/Main/Repository">00A865</idno><idno type="wicri:Area/Russie/Extraction">000429</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term><term>Conduction bands</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Localized states</term><term>Valence bands</term><term>Visible spectra</term><term>Wide band gap semiconductors</term><term>X-ray absorption spectra</term><term>X-ray emission spectra</term><term>X-ray scattering</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7870E</term><term>7870D</term><term>7155</term><term>7855C</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Etat localisé</term><term>Structure bande</term><term>Spectre absorption RX</term><term>Spectre émission RX</term><term>Spectre visible</term><term>Bande valence</term><term>Bande conduction</term><term>Diffusion RX</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Soft-x-ray-emission and -absorption spectroscopies with their elemental specificities are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both valence and conduction bands. In particular, a depletion of the valence-band maximum in the N local charge, taking place at the N impurities, appears as one of the fundamental origins of reduced optical efficiency of Ga(In)AsN. Incorporation of In in large concentrations forms In-rich N local environments such as In<sub>4</sub>N which become the main recombination centers in GaInAsN. Furthermore, a k character of some valence and conduction states, despite the random-alloy nature of Ga(In)AsN, manifests itself in resonant inelastic x-ray scattering.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>69</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties</s1></fA08><fA11 i1="01" i2="1"><s1>STROCOV 1 (V. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>NILSSON (P. O.)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHMITT (T.)</s1></fA11><fA11 i1="04" i2="1"><s1>AUGUSTSSON (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>GRIDNEVA (L.)</s1></fA11><fA11 i1="06" i2="1"><s1>DEBOWSKA NILSSON (D.)</s1></fA11><fA11 i1="07" i2="1"><s1>CLAESSEN (R.)</s1></fA11><fA11 i1="08" i2="1"><s1>EGOROV (A. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0083813</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Soft-x-ray-emission and -absorption spectroscopies with their elemental specificities are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both valence and conduction bands. In particular, a depletion of the valence-band maximum in the N local charge, taking place at the N impurities, appears as one of the fundamental origins of reduced optical efficiency of Ga(In)AsN. 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